Memory
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Transcend DDR3-1866 ECC DIMM - For Workstation - 32 GB (4 x 8GB) DDR3 SDRAM - 1866 MHz - 1.50 V - ECC - Unbuffered - 240-pin - DIMM
Transcend proudly presents the fully qualified JetMemory™ Series for Mac® computers, including the DDR3-1600 REG-DIMM for the late 2013 Mac Pro®, supporting an astonishing 128GB of memory.
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Transcend 240pin DDR3 1600 Unbuffered DIMM 1Rank 2GB with 256Mx8 CL11 - 2 GB - DDR3-1600/PC3-12800 DDR3 SDRAM - 1600 MHz - CL11 - 1.50 V - Non-ECC - Unbuffered - 240-pin - DIMM
The TS256MLK64V6N is a 256M x 64bits DDR3-1600 1Rank unbuffered DIMM. The TS256MLK64V6N consists of 8pcs 256Mx8bits DDR3 SDRAMs in FBGA packages and a 2048 bits serial EEPROM on a 240-pin printed circuit board. The TS256MLK64V6N is a Dual In-Line Memory Module and is intended for mounting into 240-pin edge connector sockets.
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Transcend 2GB DDR3 SDRAM Memory Module - 2GB - 1333MHz DDR3-1333/PC3-10600 - ECC - DDR3 SDRAM - 240-pin DIMM
The TS256MLK72V3U is a 256M x 72bits DDR3-1333 ECC Unbuffered-DIMM. The TS256MLK72V3U consists of 18pcs 128Mx8bits DDR3 SDRAMs in FBGA packages and a 2048 bits serial EEPROM on a 240-pin printed circuit board. The TS256MLK72V3U is a Dual In-Line Memory Module and is intended for mounting into 240-pin edge connector sockets. Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges of DQS. Range of operation frequencies, programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
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Transcend DDR3 240Pin Long-DIMM DDR3-1600 ECC Unbuffer Memory - 2 GB - DDR3-1600/PC3-12800 DDR3 SDRAM - 1600 MHz - CL11 - 1.50 V - ECC - Unbuffered - 240-pin - DIMM
Specially engineered for use in high performance servers and workstations, Transcend's professional grade server memory features highly efficient ECC (Error Correcting Code) to ensure 100% stable, round-the-clock operation. These memory modules are manufactured with the highest grade, brand-name DRAM chips available, which are selected only after passing of our stringent performance and stability evaluation, including rigorous testing in extreme environments. Providing system administrators and workstation users with the utmost level of memory stability and reliability has always been Transcend's highest priority, which is why every component used in the manufacturing process is exhaustively tested by our highly experienced team of R&D engineers long before the production process even begins. This same level of meticulous inspection and attention to detail is also applied to the DRAM chips used in server memory production, which undergo countless stress-tests and stability evaluations to guarantee each module produced lives up to Transcend's outstanding level of compatibility and world-class reliability.
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Transcend TS256MSK64V1N 2GB DDR3 SDRAM Memory Module - For Notebook - 2 GB (1 x 2GB) - DDR3-1066/PC3-8500 DDR3 SDRAM - 1066 MHz - Non-ECC - Unbuffered - 204-pin - SoDIMM
The TS256MSK64V1N is a 256M x 64bits DDR3-1066 SO-DIMM. The TS256MSK64V1N consists of 8pcs 256Mx8bits DDR3 SDRAMs FBGA packages and a 2048 bits serial EEPROM on a 204-pin printed circuit board. The TS256MSK64V1N is a Dual In-Line Memory Module and is intended for mounting into 204-pin edge connector sockets.
Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges of DQS. Range of operation frequencies, programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
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Transcend TS256MSK64V3N 2GB DDR3 SDRAM Memory Module - For Notebook - 2 GB (1 x 2GB) - DDR3-1333/PC3-10666 DDR3 SDRAM - 1333 MHz - 204-pin - SoDIMM - Lifetime Warranty
The TS256MSK64V3N is a 256M x 64bits DDR3-1333 SO-DIMM. The TS256MSK64V3N consists of 8pcs 256Mx8bits DDR3 SDRAMs FBGA packages and a 2048 bits serial EEPROM on a 204-pin printed circuit board. The TS256MSK64V3N is a Dual In-Line Memory Module and is intended for mounting into 204-pin edge connector sockets.
Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges of DQS. Range of operation frequencies, programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
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